Salah H. Gamal, A. Zekry, M. N. Saleh, “Measurement of the diffusion length and the pn product in silicon,” IEEE Trans. on Electron Devices, ED-34, pp. 1121-1127, no. 5, 1987.
 Salah H. Gamal, H. Morel, and J. P. Chante, “Carrier lifetime measurement by ramp recovery of p-i-n diodes,” IEEE Trans. on Electron Devices, ED-37, pp. 1921-1924, no. 8, 1990.
 H. Morel, Salah H. Gamal, and J. P. Chante, “State variable modeling of the power p-i-n diode using an explicit approximation of semiconductor device equations: A novel approach” IEEE Trans. on Power Electronics, pp. 112-120, no. 1, 1994.
 Salah H. Gamal, and F. M. Al-Marzouki, “Assessment of approximate balance equation transport models used for submicron silicon device modeling,” Int. J. Electronics, Vol. 86, pp. 919-928, no. 8, 1999.
 Salah H. Gamal, and T. S. Al-Harbi, “Simple and efficient Monte Carlo simulation of high temperature hole transport in silicon and diamond, “Microelectronics Journal, Vol. 32, pp. 327-329, 2001.
Recent Publications in Nanoelectronics and Applied Physics
 Mahmoud Ossaimee and Salah H. Gamal, “Ballistic Transport in Schottky Barrier Carbon Nanotube FETs,” IEE, Circuit theory and design. Vol. 44, No. 5, p. 336, Feb 2008.
 Salah H. Gamal, “Simulation of quantum dissipative transport in nanoscale n+-n-n+ structures,” Proc. 26th Int. Conf. of Microelectronics (IEEE-MIEL 2008). pp. 201-203, Serbia,11-14 May, 2008.
 Mahmoud Ossaimee and Salah H. Gamal, “A simple treatment of quantum dissipative transport in carbon nanotubes transistors,” Int. J. Nanomanufacturing. Vol. 4, No. 1-4, pp. 283-289, 2009.
 S. Gamal, and D. Selim, “Quantization effects in gate-all-around nanowire MOSFETs: A numerical study,” Proc. 27th Int. Conf. of Microelectronics (IEEE-MIEL 2010). pp. 105-108, Serbia,16-19 May, 2010.
 Mahmoud I. Ossaimee, Mona El-Sabagh, Dalia Selim, and Salah H. Gamal, “Electron mobility in gate-all-around cylindrical silicon nanowires: A Monte Carlo study, Presented at the 22nd International Conference on Microelectronics (ICM 2010), Cairo, Egypt, 19-20 Dec. 2010.
 Mahmoud Ossaimee and Salah Gamal, “Scaling issues for p-i-n carbon nanotube FETs: A computational study,” Presented at the 22nd International Conference on Microelectronics (ICM 2010), Cairo, Egypt, 19-20 Dec. 2010.
 Dalia Selim, Salah Gamal, Wael Fikry and Omar Abd-El Halim, “Rapid and Efficient Method for Numerical Quantum mechanical simulation of gate all-around nanowire transistors,” Proc. 28th Int. Conf. of Microelectronics (IEEE-MIEL 2012). pp. 229-232, Serbia,13-16 May, 2012.
 Walid Soliman, Tarek M. Abdolkader, Mohammed M. El-Banna and Salah H. Gamal, “A novel electro-thermal model for carbon nanotube interconnects,” Journal of American Science,9(4), pp. 511-518, 2013.
 Leiting Dong, Salah H. Gamal, and Satya N. Atluri, “Stochastic Macro Material Properties, Through Direct Stochastic Modeling of Heterogeneous Microstructures with Randomness of Constituent Properties and Topologies, by Using Trefftz Computational Grains (TCG),” Computers, Materials & Continua, Vol. 37, No. 1, pp. 1-21, 2013.
 J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, W. A. de Heer, Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions, Nano Letters 14, 5170−5175 (2014).
 M. Ossaimee, S. Gamal and A. Shaker, “Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs,” ELECTRONICS LETTERS 19th March 2015 Vol. 51 No. 6 pp. 503–504.
 Soliman Abdalla, Fahad Al-Marzouki , Abdullah Obaid and Salah Gamal, “Effect of Addition of Colloidal Silica to Films of Polyimide, Polyvinylpyridine, Polystyrene, and Polymethylmethacrylate Nano-Composites,” Materials 2016, 9(2), 104.
 Mahmoud Ossaimee1, Mona El Sabbagh1, Salah Gamal, “Temperature dependence of carrier transport and electrical characteristics of Schottky-barrier carbon nanotube field effect transistors,” Micro & Nano Letters, Vol. 11, pp. 1–4, no.2, 2016.
 Soliman Abdalla, Fahad Al-Marzouki, Abdullah Obaid, Salah Gamal, “Action of colloidal silica films on different nano-composites,” Results in Physics 6 (2016) 209–214
Shimaa I Sayed and Salah H. Gamal, “A novel high speed adder-subtractor design based on CNFET,” International Journal of Applied Information Systems, Volume 10 – No.7, pp. 29-32, 2016.
 Ossaimee, M., Salah, A., Gamal, S.H., Shaker, A., Salem, M.S., "Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering," Ain Shams Engineering 101848, 2022.