صلاح الدين حسن جمال الدين محمد
أستاذ متفرغ في الفيزيقا والرياضيات الهندسية
المعلومات المهنية
أستاذ متفرغ في : 2018-04-02
أستاذ في : 2010-12-29
أستاذ مساعد في : 2001-10-29
مدرس في : 1992-06-29
مدرس مساعد في : 1986-04-24
معيد في : 1981-11-12
المعلومات الدراسية
البريد الإلكتروني : salaheldin_gamal@eng.asu.edu.eg
الدكتوراه : 1992-04-14 من المعهد القومى للعلوم الكنيكية ليون - فرنسا
الماجستير : 1986-01-01 من كلية الهندسة - جامعة عين شمس
التخرج :
june /
1981
الأبحاث
- Ossaimee, M., Salah, A., Gamal, S.H., Shaker, A., Salem, M.S., " Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering ", Ain Shams Engineering Journal, 2022
- Abdalla, S., Al-Marzouki, F., Obaid, A., Gamal, S., " Action of colloidal silica films on different nano-composites ", Results in Physics, 2016
- Abdalla, S., Al-Marzouki, F., Obaid, A., Gamal, S., " Effect of addition of colloidal silica to films of polyimide, polyvinylpyridine, polystyrene, and polymethylmethacrylate nano-composites ", Materials, 2016
- Ossaimee, M., El Sabbagh, M., Gamal, S., " Temperature dependence of carrier transport and electrical characteristics of Schottky-barrier carbon nanotube field effect transistors ", Micro and Nano Letters, 2016
- Ossaimee, M., Gamal, S., Shaker, A., " Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs ", Electronics Letters, 2015
- Kunc, J., Hu, Y., Palmer, J., Guo, Z., Hankinson, J., Gamal, S.H., Berger, C., De Heer, W.A., " Planar Edge schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions ", Nano Letters, 2014
- Dong, L., Gamal, S.H., Atluri, S.N., " Stochastic macro material properties, through direct stochastic modeling of heterogeneous microstructures with randomness of constituent properties and topologies, by using Trefftz Computational Grains (TCG) ", Computers, Materials and Continua, 2013
- Selim, D., Gamal, S., Fikry, W., Abd-El Halim, O., " Rapid and efficient method for numerical quantum mechanical simulation of gate-all-around nanowire transistors ", 2012 28th International Conference on Microelectronics - Proceedings, MIEL 2012, 2012
- Ossaimee, M.I., El-Sabagh, M., Selim, D., Gamal, S.H., " Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study ", Proceedings of the International Conference on Microelectronics, ICM, 2010
- Gamal, S., Selim, D., " Quantization effects in gate-all-around nanowire MOSFETs: A numerical study ", 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010
- Ossaimee, M., Gamal, S., " Scaling issues for p-i-n carbon nanotube FETs: A computational study ", Proceedings of the International Conference on Microelectronics, ICM, 2010
- Ossaimee, M., Gamal, S.H., " A simple treatment of quantum dissipative transport in carbon nanotube transistors ", International Journal of Nanomanufacturing, 2009
- Shaker, A., Zekry, A., Omar, O.A., Gamal, S.H., " An improved power diode model based on finite difference method ", ICACTE 2009 - Proceedings of the 2nd International Conference on Advanced Computer Theory and Engineering, 2009
- Ossaimee, M.I., Gamal, S.H., Kirah, K., Omar, O.A., " Ballistic transport in Schottky barrier carbon nanotube FETs ", Electronics Letters, 2008
- Gamal, S.H., " Simulation of quantum dissipative transport in nanoscale n <sup>+</sup>-n-n<sup>+</sup> structures ", "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008", 2008
- Gamal, S.H., Al-Harbi, T.S., " Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond ", Microelectronics Journal, 2001
- Gamal, S.H., Al-Marzouki, F.M., " Assessment of approximate balance equation transport models used for submicron silicon device modelling ", International Journal of Electronics, 1999
- Morel, H., Gamal, S.H., Chante, J.P., " State Variable Modeling of the Power Pin Diode Using An Explicit Approximation of Semiconductor Device Equations: A Novel Approach ", IEEE Transactions on Power Electronics, 1994
- Gamal, S.H., Morel, H., Chante, J.P., " Carrier Lifetime Measurement by Ramp Recovery of p-i-n Diodes ", IEEE Transactions on Electron Devices, 1990
- Gamal, S.H., Saleh, M.N., " A method for the measurement of the diffusion length and the pn product in silicon ", IEEE Transactions on Electron Devices, 1987
المشاريع البحثية
1. "Analysis and Study of Metal-4H Silicon Carbide Contacts," Principal Investigator.
Project no. (155/421), King Abdulaziz University, Faculty of Science, Jeddah, KSA.
2. "Characterization of Optoelectronic Devices," Co-Investigator
Project no. (157/423), King Abdulaziz University, Faculty of Science, Jeddah, KSA.