Salah Eldin Hassan Gamal

Emeritus Professor at Engineering Physics and Mathematics

Career Information

Academic Information

Publications

1. Ossaimee, M., Salah, A., Gamal, S.H., Shaker, A., Salem, M.S., " Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering ", Ain Shams Engineering Journal, 2022
2. Abdalla, S., Al-Marzouki, F., Obaid, A., Gamal, S., " Action of colloidal silica films on different nano-composites ", Results in Physics, 2016
3. Abdalla, S., Al-Marzouki, F., Obaid, A., Gamal, S., " Effect of addition of colloidal silica to films of polyimide, polyvinylpyridine, polystyrene, and polymethylmethacrylate nano-composites ", Materials, 2016
4. Ossaimee, M., El Sabbagh, M., Gamal, S., " Temperature dependence of carrier transport and electrical characteristics of Schottky-barrier carbon nanotube field effect transistors ", Micro and Nano Letters, 2016
5. Ossaimee, M., Gamal, S., Shaker, A., " Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs ", Electronics Letters, 2015
6. Kunc, J., Hu, Y., Palmer, J., Guo, Z., Hankinson, J., Gamal, S.H., Berger, C., De Heer, W.A., " Planar Edge schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions ", Nano Letters, 2014
7. Dong, L., Gamal, S.H., Atluri, S.N., " Stochastic macro material properties, through direct stochastic modeling of heterogeneous microstructures with randomness of constituent properties and topologies, by using Trefftz Computational Grains (TCG) ", Computers, Materials and Continua, 2013
8. Selim, D., Gamal, S., Fikry, W., Abd-El Halim, O., " Rapid and efficient method for numerical quantum mechanical simulation of gate-all-around nanowire transistors ", 2012 28th International Conference on Microelectronics - Proceedings, MIEL 2012, 2012
9. Ossaimee, M.I., El-Sabagh, M., Selim, D., Gamal, S.H., " Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study ", Proceedings of the International Conference on Microelectronics, ICM, 2010
10. Gamal, S., Selim, D., " Quantization effects in gate-all-around nanowire MOSFETs: A numerical study ", 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010
11. Ossaimee, M., Gamal, S., " Scaling issues for p-i-n carbon nanotube FETs: A computational study ", Proceedings of the International Conference on Microelectronics, ICM, 2010
12. Ossaimee, M., Gamal, S.H., " A simple treatment of quantum dissipative transport in carbon nanotube transistors ", International Journal of Nanomanufacturing, 2009
13. Shaker, A., Zekry, A., Omar, O.A., Gamal, S.H., " An improved power diode model based on finite difference method ", ICACTE 2009 - Proceedings of the 2nd International Conference on Advanced Computer Theory and Engineering, 2009
14. Ossaimee, M.I., Gamal, S.H., Kirah, K., Omar, O.A., " Ballistic transport in Schottky barrier carbon nanotube FETs ", Electronics Letters, 2008
15. Gamal, S.H., " Simulation of quantum dissipative transport in nanoscale n ⁺-n-n⁺ structures ", "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008", 2008
16. Gamal, S.H., Al-Harbi, T.S., " Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond ", Microelectronics Journal, 2001
17. Gamal, S.H., Al-Marzouki, F.M., " Assessment of approximate balance equation transport models used for submicron silicon device modelling ", International Journal of Electronics, 1999
18. Morel, H., Gamal, S.H., Chante, J.P., " State Variable Modeling of the Power Pin Diode Using An Explicit Approximation of Semiconductor Device Equations: A Novel Approach ", IEEE Transactions on Power Electronics, 1994
19. Gamal, S.H., Morel, H., Chante, J.P., " Carrier Lifetime Measurement by Ramp Recovery of p-i-n Diodes ", IEEE Transactions on Electron Devices, 1990
20. Gamal, S.H., Saleh, M.N., " A method for the measurement of the diffusion length and the pn product in silicon ", IEEE Transactions on Electron Devices, 1987
21. Salah Gamal; Ghada Bassioni; Ahmed Salah; David Yevick, " Predicting CNT TFET Output Characteristics Using Deep Learning Techniques ", 2024 IEEE International Conference on Technology Management, Operations and Decisions (ICTMOD), 2024

Research Projects

1. "Analysis and Study of Metal-4H Silicon Carbide Contacts," Principal Investigator.
Project no. (155/421), King Abdulaziz University, Faculty of Science, Jeddah, KSA.
2. "Characterization of Optoelectronic Devices," Co-Investigator
Project no. (157/423), King Abdulaziz University, Faculty of Science, Jeddah, KSA.