Mohamed Abdelhamid Abouelatta
Professor at Electronics Engineering and Electrical Communications
Career Information
Academic Information
Brief
Mohamed A. Abouelatta was born in Cairo, Egypt. He received the B.Sc., M.Sc. degrees in 1996 and 2001, respectively, in Electronics and Communication engineering from Ain Shams University (ASU). He received PhD degrees from Ain Shams University and from the National Institute of Applied Sciences (INSA) of Lyon, France in 2010. He is now an Associate professor in the Faculty of Engineering, ASU. His fields of research are modelling, design and characterization of Power devices and Nano-devices, designing of Smart Power Integrated circuits, Photovoltaic and 3D CMOS Heterogeneous Integrated Circuits.
Awards
1. Distinction with honor degree, B.Sc. (1996)
2. Granted Ain Shams Universiy Award (March 2003).
3. Participate in the “Innovations for The Future” exhibition of the Ain Shams University (2015)
4. Granted the first paper award in the NRSC’2015 conference (2015)
Books
Christian Gontrand , Olivier Valorge , Francis Calmon, Jacques Verdier , Mohamed Abouelatta-Ebrahim, Cristian Andrei, José Cruz Nunez – Perez , Maya Lakhdara, Saïda Latreche and Pierre Dautriche, “Heterogeneous Circuits Insights through Substrate Coupling: Noises and Parasites” , International Journal of Circuits, Systems and Signal Processing, Nova Science Publishers Inc. Hauppauge, NY, USA, pp. 1-89, 2010.
Articles
[1] Christian Gontrand , Olivier Valorge , Francis Calmon, Jacques Verdier , Mohamed Abouelatta-Ebrahim, Cristian Andrei, José Cruz Nunez – Perez , Maya Lakhdara, Saïda Latreche and Pierre Dautriche, “Heterogeneous Circuits Insights through Substrate Coupling: Noises and Parasites” , International Journal of Circuits, Systems and Signal Processing, Nova Science Publishers Inc. Hauppauge, NY, USA, pp. 1-89, 2010.
[2] M. Abouelatta-Ebrahim, R. Dahmani, O. Valorge, F. Calmon and C. Gontrand, “Modelling of through Silicon via and Devices Electromagnetic Coupling”, Microelectronics Journal, Vol. 42, No. 2, pp. 316-324, 2011.
[3] M.Abou-elatta Ebrahim, C.Gontrand, A.Zekry, “Design of Complementary LDMOS in 0.35µm BiCMOS technology for Smart Integration”, European Journal of Applied Physics (EPJ AP), Vol. 57, No. 1, p.10103, 2012.
[4] Olivier Valorge , Fengyuan Sun ,Jean-Etienne Lorival , Mohamed Abouelatta-Ebrahim , Francis Calmon and Christian Gontrand, “Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio frequency Circuits”, Circuits & Systems, Vol. 3,No. 2, April 2012
[5] D. M. El-Laithy, A. Zekry, M. Abouelatta ,“Speeding-up Phase-Locked Loops based on Adaptive Loop Bandwidth. International Journal of Computer Applications, 61(3), 1-6, 2013.
[6] D. M. El-Laithy, A. Zekry, M. Abouelatta , “Automatic Measurements of the Performance Parameters of Practical Phase-Locked Loops. International Journal of Computer Applications, 61(3), pp.7-13, 2013.
[7] A. Shaker, G. T. Sayah, M. Abouelatta , A. Zekry, “Thyristor Compact Modeling based on Gummel-Poon Model Including Parameter Extraction Procedure”, International Journal of Computer Applications, IJCA, 61(16), pp.12-20, 2013.
[8] Mohamed Abouelatta, Ahmed Shaker, Christian Gontrand and Mahmoud Ossaimee, “Performance of Standard and Double-Sided 3D-Radiation Detectors under the Impact of a Temperature Pulse”, IET Electronics Letters, 51(21), pp. 1668-1670, 2015.
[9] Mohamed Abouelatta, M., Shaker, A., Sayah, G. T., Gontrand, C., and Zekry, A. (2015). Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study. Ain Shams Engineering Journal, Vol. 6, pp. 501-509, 2015.
[10] Gontrand, C., Labiod, S., Bella, M., Abouelatta-Ebrahim, M., Despeisse, M., Calmon, F., & Latreche, S. Towards 3D Integration of Monolithic X or Γ Ray Detectors Under Possible Electromagnetic Perturbations or Malfunctions. International Review on Modelling and Simulations (IREMOS), 8(1), 63-74, 2015
[11] K. A. Mohammad, A. Zekry, M. Abouelatta, “LED Based Spectrophotometer can compete with conventional one”, International Journal of Engineering & Technology, 4(2), 399-407, 2015.
(Participate in the innovations exhibition of the Ain Shams University)
[12] Elsharief, M., Zekry, A., and Abouelatta, M. . Implementing a Standard DVB-T System using MATLAB Simulink. International Journal of Computer Applications, 98(5), 27-32, 2014
[13] Ellabban, I. A., Abouelatta, M., and Zekry, A. Measurement of Telephone Line Parameters using the Three Voltmeter Method. International Journal of Computer Applications (IJCA), 107(11), 2014, pp. 35-41,2014.
[14] M. Ossaimee, A.Shaker, M. El-Banna, and M. Abouelatta, “A computational study on electrical characteristics of a proposed double gate heterojunction SB-CNTFET”, Journal of American Science,10(1),pp. 301-303, 2014.
[15] A. Shaker, M. Abouelatta, G. T. Sayah and A. A. Zekry, ‘Comprehensive physically based modelling and simulation of power diodes with parameter extraction using MATLAB’, IET Power Electronics, 7(10), pp. 2464-2471, 2014.
[16] Ellabban, I. A., Abouelatta, M., and Zekry, A. Detecting the Triple Resistance Fault in Twisted Pair Telephone Lines. Communications on Applied Electronics (CAE), Vol. 2 – No.4, July 2015, pp. 24-31, 2015.
[17] Tahseen, S., Abouelatta, M., and Zekry, A. A modified TV tuner for spectrum sensing in TV UHF bands. Communications on Applied Electronics (CAE), Vol. 2 – No.3, June 2015, pp. 23- 28, 2015.
[18] A.Shaker, M. Ossaimee, A. Zekry and M. Abouelatta, ‘Influence of Gate Overlap Engineering on Ambipolar and High Frequency Characteristics of Tunnel-CNTFET’, Superlattices and Microstructures, 86, pp.518-530, 2015.
[19] A. Zekry, G. T. Sayah, M. Abouelatta, E. Shetab, ‘Optimized Current-Mode Class-D RF Power Amplifier for Software Defined Radio’, Communications on Applied Electronics (CAE), Vol. 3– No.3, pp. 11-15, 2015.
[20] K. A. Mohammad, A. Zekry, and M. Abouelatta, “LED Based Spectrophotometer can compete with conventional one”, Int. J. of Engineering & Technology”, 4(2), pp.399-407, 2015.
[21]
A. Shaker, M. Abouelatta, M. El-Banna, M. Ossaimee, and A. Zekry, ‘Full electrothermal physically-based modeling of the Power Diode using PSPICE’, Solid State Electronics journal, 116, pp.70-79, 2016.
[22] A. Zekry, A. Ibrahim, A. Atallah, M. Abouelatta, A. Shaker, ‘Four Voltmeter Impedance Meter Based on Virtual Instrumentation’, MAPAN-Journal of Metrology Society of India, Vol. 31, No. 3, pp 159–167, 2016.
[23] M. Abouelatta, A. Shaker, M. El-Banna, G.T. Sayah, C. Gontrand & A. Zekry, “A Physically-Based Analytical Model for Reduced Surface Field Laterally Double Diffused MOSFETs”, World Academy of Science, Engineering and Technology, International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering, 11(6), pp.593-599, 2017.
[24] Lotfy, Ahmed, Wagdy R. Anis, M. A. Atalla, Joseph VM Halim, and M. Abouelatta. "Design an Optimum PV System for the Satellite Technology using High Efficiency Solar Cells." International Journal of Computer Applications, IJCA, Vol.168, No. 3, 2017.
[25] Abdelhady Ellakany, Mohamed Abouelatta, Ahmed Ghazala, Gihan Sayah, and Mohammed El-Banna. "TCAD simulation of a proposed 3D CdZnTe detector." IET Journal of Engineering, Vol.1, No. 1, 2017.
[26] Zekry, A., A. Shaker, M. Ossaimee, M. S. Salem, and M. Abouelatta. "A comprehensive semi-analytical model of the polysilicon emitter contact in bipolar transistors." Journal of Computational Electronics, pp.1-10, 2017.
[27] N. Salem, M. Ossaimee, A.Shaker, and M. Abouelatta, ‘Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs. Doping Engineering’, ECS Journal of Solid State Science and Technology, Accepted, Jan.,2018.
[28] Abdelhady Ellakany, Mohamed Abouelatta, Ahmed Ghazala, C. Gontrand, “ Development and Simulation of 3D CdTe Pillar Detectors”, IEEE Transactions on Radiation and Plasma Medical Sciences, Revised, 2017
[29] M. Abouelatta, C. Gontrand, A. Shaker, “Impact of TSV location in HVIC on CMOS operation: A Mixed-Mode TCAD Simulation Study. Microelectronics Journal, Revised, 2017.
[30] E. Sheta, M. Abouelatta, G. T. Sayah, A. Zekry, ‘Novel Voltage-Mode Class-D RF Power Amplifier for Software Defined Radio’, International Journal of Electronics, Submitted, 2017.
Publications
[1] M.Abou-elatta, C.Gontrand, A.Zekry, “Characterization of RESURF-nLDMOS in 0.35µm based BiCMOS technology”, Proc. JNRDM Lyon, France, 18-20 May 2009.
[2] M.Abou-elatta, C.Gontrand, A.Zekry, “Optimization of Buffered RESURF-LDMOS”, Proc. Colloque LIA-LN2, France, pp. 81-83, 1-3 July 2009.
[3] M.Abou-elatta, C.Gontrand, A.Zekry, “RESURF-nLDMOSFET in 0.35µm BiCMOS technology-characterisation and modeling”, IEEE Proc. International conference on Design & Technology of Integrated Systems (DTIS), pp.9-14, Tunisia, 22-25 March 2010.
[4] M.Abou-elatta, C.Gontrand, A.Zekry, “cLDMOS in 0.35µm BiCMOS technology with Deep Trench Isolation suitable for Smart Power Integration”, Proc. JNRDM Montpellier, France, 7-9 June 2010.
[5] M.Abou-elatta, C.Gontrand, A.Zekry, “Complementary LDMOSFET in 0.35µm BiCMOS technology-characterisation and modeling”, IEEE Proc. International Symposium on Industrial Electronics (ISIE), pp. 736-741, Italy, 4-7 July 2010.
[6] Marwa S. Salem, Ahmed Shaker, Mohamed Abouelatta and A. Zekry, “Performance of a Proposed Low Cost High Efficiency Solar Cell Structure”, Proc. International Conference on Power and Energy Systems (ICPES 2012), Hong Kong, April 2012, pp. 349-354.
[7] Marwa S. Salem, Ahmed Shaker, Mohamed Abouelatta and A. Zekry, “Effect of Base Width Variation on the Performance of a Proposed Non Ultraviolet Low Cost High efficiency Solar Cell Structure”, Proc. International Conference on Power and Energy Systems (ICPES 2012), Hong Kong, April 2012, pp.355-359.
[8] Marwa S. Salem, Ahmed Shaker, Mohamed Abouelatta and A. Zekry, “Effect of Base Width Variation on the Performance of a Proposed Ultraviolet Low Cost High efficiency Solar Cell Structure”, IEEE Proc. Photovoltaic Specialist Conference (PVSC), pp. 000775-000777, June 3-8, 2012, Austin, Texas, USA.
[9] K. Y. Kamel, A. S. Ibrahim, A. Zekry and M. Abouelatta, “On design of M2M smart energy control and management architecture using smart metering technology”, IEEE Proc. International Conference on Computer Engineering & Systems (ICCES), pp. 452-460, 2016, Cairo, Egypt.
[10] Mahmoud Elsharief, Abdelhaliem Zekry, Mohamed Abouelatta, HyungWon Kim, “A Fast and Accurate Simulation Platform of DVB-T and Performance Evaluation Using Rician channel”, IEIE Proc., June 2016, Korea.
[11] A. Ellakany, A. Shaker, M. Abouelatta, I. M. Hafez, and C. Gontrand, “Modeling and simulation of a hybrid 3D silicon detector system using SILVACO and Simulink/MATLAB framework”, IEEE Proc. 28th International Conference on Microelectronics (ICM), pp. 377-38, 2016, Cairo, Egypt.
[12] M. Mousa, M. H. Ahmed, K. Hassan, M. Abouelatta, A. E. Afifi, “High quality tunable Brillouin optoelectronic oscillator”, Proc. SPIE Optical Engineering+ Applications, International Society for Optics and Photonics, pp. 995807-995807, 2016, San Diego, California, USA.
[13] M. S. Salem, A. Zekry, A. Shaker, and M. Abouelatta, “Design and simulation of proposed low cost solar cell structures based on heavily doped silicon wafers”, IEEE Proc. Photovoltaic Specialists Conference (PVSC), pp. 2393-2397, June 6-10, 2016, Portland, USA.
[1] M.A.Abou El-atta, M.A.Abou El-ela and M.K.El said"Current-controlled oscillator with practical implementation in phase-locked loop", Proc. Of 19th National Radio Science Coference NRSC’ 2002 , March 19-21,2002, pp.D53-D60.
[2] M.A.Abou El-atta, M.A.Abou El-ela and M.K.El said, "Four- Quadrant Current Multiplier And Its Application As A Phase-Detector", Proc. Of 19th National Radio Science Coference NRSC’ 2002, March 19-21, 2002, pp. D61-D67.
[3] N. Safwat, A. Zekry, and M. Abouelatta, “Avionics Full-duplex switched Ethernet (AFDX): Modeling and Simulation”, IEEE Proc. National Radio Science Conference, NRSC'2015, pp. 283-293, Cairo, Egypt.
(The first paper award in the conference)
Research Projects
1. JAMILA project
Joint mAster of Mediterranean Initiatives on renewabLe and sustAinable energy Project Number: 544339-TEMPUS-1-2013-1-IT-TEMPUS-JPCR Grant Agreement Number 2013-4541/001-001.
كلية الهندسة- جامعة عين شمس
2. INFIERI project
INFIERI (intelligent fast interconnected and efficient devices for frontier exploitation in research and industry program), The U.S. Department of Energy and National Science Foundation, the Italian Instituto Nazionale di Fisica Nucleare, the EU Community FP7-2012- ITN contract 317446.
INL lab-INSA Lyon, France و معمل Solid State Electronics- كلية الهندسة- جامعة عين شمس
3. “Development of computer-aided simulation tool for solar cells”
Project number: 43508006
قسم الهندسة الكهربائية - جامعة أم القري – المملكة العربية السعودية