Faculty of Engineering - Ain Shams University, Home

Optoelectronics Devices

ECE442

English Description

Interaction of radiation and atomic systems, Classical electron oscillator model, Einstein model, Rate equations, 3-level and 4-level lasers, gain saturation, Homogeneous and inhomogeneous broadening, Fabry-Perot resonators, Ring resonators, Erbium doped fibre lasers and amplifiers, Photons in semiconductors, Semiconductor gain and loss, Hetero-junctions, Double-Heterojunction lasers, Semiconductor optical amplifiers, FP- and TW-SOAs, Quantum-well lasers, Threshold current computations, Edge and surface emitting LEDs, PIN and APD detectors, Solar cells.
Arabic Description

Interaction of radiation and atomic systems, Classical electron oscillator model, Einstein model, Rate equations, 3-level and 4-level lasers, gain saturation, Homogeneous and inhomogeneous broadening, Fabry-Perot resonators, Ring resonators, Erbium doped fibre lasers and amplifiers, Photons in semiconductors, Semiconductor gain and loss, Hetero-junctions, Double-Heterojunction lasers, Semiconductor optical amplifiers, FP- and TW-SOAs, Quantum-well lasers, Threshold current computations, Edge and surface emitting LEDs, PIN and APD detectors, Solar cells.

Department
Electronics and Communications Engineering
Credit Hours
3
Grades
Total ( 100 ) = Midterm (20) + tr.Major Assessment (35 = tr.Industry 0% , tr.Project 10% , tr.Self_learning 10% , tr.Seminar 20% ) + tr.Minor Assessment (5) + Exam Grade (40)
Hours
Lecture Hours: 3, Tutorial Hours: 1, Lab Hours: 0
Required SWL
125
Equivalent ECTS
5