كلية الهندسة - جامعة عين شمس, الرئيسية

الرئيسية  >  كلية الهندسة - جامعة عين شمس, الرئيسية

Solid State Electronic Devices

What Will Learn?

  • Course Aims
    The course aims to: ⁻ Provide students with foundational background, theories and mechanism of operation of principle semiconductor devices with emphasis on physical concepts. ⁻ Develop the student skills in modeling and characterization of semiconductor devices. ⁻ Provide students with good understanding of the link between device physics and circuit design by introducing to them design parameters, performance parameters, CAD models, and device scaling theory, etc.
  • Course Goals
  • Quality Education
  • Decent Work and Economic Growth
  • Industry, Innovation and Infrastructure

Requirements

ECE221

Description

  • English Description

    Semiconductors Review, Theory of junctions and interfaces: p-n and metal-semiconductor junctions, Oxide-semiconductor and heterojunction interfaces, Principles of bipolar transistor operation, Field effect devices: MOSFET, Downscaling principles and Submicron devices,Nanoscale MOSFETs, High Field Effects, SOI transistors, Multi-gate MOSFETs, TFET, TCAD simulators.
  • Arabic Description

    Semiconductors Review, Theory of junctions and interfaces: p-n and metal-semiconductor junctions, Oxide-semiconductor and heterojunction interfaces, Principles of bipolar transistor operation, Field effect devices: MOSFET, Downscaling principles and Submicron devices,Nanoscale MOSFETs, High Field Effects, SOI transistors, Multi-gate MOSFETs, TFET, TCAD simulators.
  • قسم
    هندسة الإلكترونيات والإتصالات
  • الساعات المعتمدة
    3
  • الدرجات
    الإجمالي ( 100 ) = نصف العام (20) + tr.Major Assessment (35 = tr.Industry 0% , tr.Project 10% , tr.Self_learning 5% , tr.Seminar 25% ) + tr.Minor Assessment (5) + درجة الامتحان (40)
  • الساعات
    ساعات المحاضرة: 2, ساعات التعليم: 2, ساعات المعمل: 0
  • Required SWL
    150
  • Equivalent ECTS
    6
  • ‐ B. G. Streetman, S. K. Banerjee, Solid State Electronic Devices, 7th Edition, Prentice-Hall, New Jersey, 2016.
  • ‐ Semiconductors Physics and Devices Basic principles - by Donald A. Neaman, 3rd edition, Mc Graw Hill
  • ‐ S. O. Kasap, Principles of Electronic Materials and Devices, 3rd Edition, McGraw Hill 2006.
  • ‐ S.M. Sze, Physics of Semiconductor Devices, 2nd Edition, Wiley-Interscience, 1981.
  • ‐ E. Yang, "Microelectronics Devices ", McGraw Hill, 1988.
  • ‐ Transactions of IEEE Electron Devices, EKB: https://mplbci.ekb.eg/